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參數(shù)資料
| 型號(hào)： | MMDF3N06HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 3300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | MMDF3N06HDR2 |
MMDF3N06HD
http://onsemi.com
6
Figure 8. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1000
1.0
100
10
1.0
I S
,SOURCE
CURRENT
(AMPS)
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1.0
1.5
2.0
2.5
0.5
0.55
0
2.0
4.0
6.0
8.0
ID = 3.0 A
TJ = 25°C
VGS
6.0
3.0
0
12
9.0
30
20
10
0
VDS
QT
Q1
Q2
Q3
10
16
-10
0
10
15
25
VGS
VDS
TJ = 25°C
1000
800
600
400
200
0
20
-5.0
5.0
Ciss
30
V DS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
VDD = 30 V
ID = 3.0 A
VGS = 10 V
TJ = 25°C
Figure 9. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage
versus Current
0.5
TJ = 25°C
VGS = 0 V
0.6
0.65
0.7
0.75
0.8
100
10
td(off)
1200
12
14
Ciss
Crss
Coss
5.0
2.0
11
8.0
4.0
1.0
10
7.0
td(on)
tr
tf
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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