參數(shù)資料
型號: MMDF3N06HDR2
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 3300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 6/12頁
文件大?。?/td> 135K
代理商: MMDF3N06HDR2
MMDF3N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.4
0.8
1.2
1.6
2.0
0
1.0
3.0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.2
0.25
0.3
0.06
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
1000
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = -55°C
100
°C
0.15
4.0
2.0
0.05
TJ = 25°C
2.0
4.0
6.0
5.0
1.0
1.5
2.0
2.5
3.0
3.5
0.1
0.09
1.0
1.5
2.0
3.5
5.0
10
0
5.0
10
15
30
2.3 V
20
25
0
0.07
0.085
3.0
2.0
3.0
4.0
5.0
8.0
6.0
7.0
9.0
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
2.5
3.0
10 V
VGS = 4.5 V
TJ = 25°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
-50
0
50
100
150
0
0.2
1.0
1.2
1.8
VGS = 10 V
ID = 1.5 A
125
75
25
-25
VGS = 0 V
TJ = 125°C
0.2
0.6
1.8
1.4
1.0
5.0
6.0
4.5 V
4.3 V
4.1 V
VGS = 10 V
ID = 3.0 A
TJ = 25°C
1.75
2.75
2.25
3.25
0.065
0.075
0.08
4.5
4.0
0.4
0.6
0.8
1.4
1.6
1.0
100
25°C
2.1 V
2.5 V
2.7 V
2.9 V
3.1 V
6.0 V
3.3 V
3.5 V
3.7 V
3.9 V
25
°C
100°C
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