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參數(shù)資料
| 型號： | MMDF3N06HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MMDF3N06HDR2 |
MMDF3N06HD
http://onsemi.com
10
PACKAGE DIMENSIONS
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
SEATING
PLANE
1
4
5
8
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN
MAX
MIN
MAX
INCHES
4.80
5.00
0.189
0.197
MILLIMETERS
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.053
0.069
D
0.33
0.51
0.013
0.020
G
1.27 BSC
0.050 BSC
H
0.10
0.25
0.004
0.010
J
0.19
0.25
0.007
0.010
K
0.40
1.27
0.016
0.050
M
0
8
0
8
N
0.25
0.50
0.010
0.020
S
5.80
6.20
0.228
0.244
–X–
–Y–
G
M
Y
M
0.25 (0.010)
–Z–
Y
M
0.25 (0.010)
Z
S
X S
M
____
XXXXXX
ALYW
SO–8
CASE 751–07
ISSUE V
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| MMDF4207R2 | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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