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參數(shù)資料
| 型號(hào)： | MMDF3N06HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MMDF3N06HDR2 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MMDF3N06HD/D
MMDF3N06HD
Preferred Device
Advance Information
Power MOSFET
3 Amps, 60 Volts
N–Channel SO–8, Dual
These miniature surface mount MOSFETs feature low RDS(on) and
true logic level performance. Dual MOSFET devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Gate–to–Source Voltage – Continuous
VGS
± 20
Vdc
Drain Current – Continuous @ TA = 25°C
ID
IDM
3.3
16.5
Adc
Apk
Source Current – Continuous @ TA = 25°C
IS
1.7
Adc
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc,
VDS = 32 Vdc, IL = 15 Apk, L = 10 mH,
RG = 25 )
EAS
105
mJ
Thermal Resistance – Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
1
8
Device
Package
Shipping
ORDERING INFORMATION
MMDF3N06HDR2
SO–8
2500 Tape & Reel
SO–8, Dual
CASE 751
STYLE 11
http://onsemi.com
N–Channel
LYWW
MARKING
DIAGRAM
D
S
G
D3N06
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
3 AMPERES
60 VOLTS
RDS(on) = 100 mW
Preferred devices are recommended choices for future use
and best overall value.
D
S
G
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