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參數(shù)資料
| 型號(hào)： | MMDF3N06HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | MMDF3N06HDR2 |
MMDF3N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
60
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0 Vdc)
(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
0.001
0.05
1.0
25
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
12
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
VGS(th)
1.0
–
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
–
67.5
82.5
100
200
m
W
Forward Transconductance
(VDS = 15 Vdc, ID = 1.5 Adc)
gFS
–
7.5
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
442
618
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
97.6
137
Transfer Capacitance
f = 1.0 MHz)
Crss
–
24.4
34.2
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
10.6
22.1
ns
Rise Time
(VDD = 30 Vdc, ID = 3.3 Adc,
VGS =45Vdc
tr
–
15.9
31.8
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 30 )
td(off)
–
23.8
47.6
Fall Time
RG 30 )
tf
–
14.7
29.4
Turn–On Delay Time
td(on)
–
7.0
14
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS =10Vdc
tr
–
4.8
9.6
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
32.4
64.8
Fall Time
RG 9.1 )
tf
–
14.2
28.4
Gate Charge
(S
Fi
8)
QT
–
14.5
29
nC
(See Figure 8)
(VDS = 30 Vdc, ID = 3.3 Adc,
Q1
–
1.8
–
(VDS 30 Vdc, ID 3.3 Adc,
VGS = 10 Vdc)
Q2
–
3.5
–
Q3
–
3.75
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
0.78
0.65
1.2
–
Vdc
Reverse Recovery Time
(I
17Ad
V
0Vd
trr
–
27.9
–
ns
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
–
23
–
dIS/dt = 100 A/s)
tb
–
4.9
–
Reverse Recovery Stored Charge
QRR
–
0.038
–
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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