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參數(shù)資料
| 型號： | MMBT589LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor |
| 中文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | MMBT589LT1 |
MMBT589LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–30
–
Vdc
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
V(BR)CBO
–50
–
Vdc
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
V(BR)EBO
–5.0
–
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
–
–0.1
Adc
Collector–Emitter Cutoff Current
(VCES = –30 Vdc)
ICES
–
–0.1
Adc
Emitter Cutoff Current
(VEB = –4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (1) (Figure 1)
(IC = –1.0 mA, VCE = –2.0 V)
(IC = –500 mA, VCE = –2.0 V)
(IC = –1.0 A, VCE = –2.0 V)
(IC = 2.0 A, VCE = –2.0 V)
Collector–Emitter Saturation Voltage (1) (Figure 3)
(IC = –0.5 A, IB = –0.05 A)
(IC = –1.0 A, IB = 0.1 A)
(IC = –2.0 A, IB = –0.2 A)
Base–Emitter Saturation Voltage (1) (Figure 2)
(IC = –1.0 A, IB = –0.1 A)
Base–Emitter Turn–on Voltage (1)
(IC = –1.0 A, VCE = –2.0 V)
IEBO
–
–0.1
Adc
hFE
100
100
80
40
–
300
–
–
VCE(sat)
–
–
–
–0.25
–0.30
–0.65
V
VBE(sat)
–
–1.2
V
VBE(on)
–
–1.1
V
Cutoff Frequency
(IC = –100 mA, VCE = –5.0 V, f = 100 MHz)
fT
100
–
MHz
Output Capacitance (f = 1.0 MHz)
Cobo
–
15
pF
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%
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| MMBT589LT1G | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT589LT3 | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT589LT3G | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5962 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5962_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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