參數(shù)資料
型號(hào)： MMBTA28-7
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： MicroPower Single-Supply Operational Amplifier MicroAmplifier(TM) Series 14-TSSOP
中文描述： 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 62K
代理商： MMBTA28-7
DS30367 Rev. 2 - 2
1 of 3
MMBTA28
www.diodes.com
MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Mechanical Data
Case: SOT-23, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K6R
Weight: 0.008 grams (approx.)
Ordering & Date Code Information: See Page 2
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
MMBTA28
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
C/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
D
K
C
B
E
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
80
12
80
V
V
V
nA
nA
I
C
= 100 A I
E
= 0
I
E
= 100 A I
C
= 0
I
C
= 100 A I
B
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 10V, I
C
= 0
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
10,000
10,000
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 100 A
I
C
= 100mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0 Typical
15 Typical
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 5.0V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
125
MHz
Notes:
2. Short duration test pulse used to minimize self-heating effect.T
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