參數(shù)資料
型號： MMBTA28
廠商： Diodes Inc.
英文描述： MicroPower Single-Supply Operational Amplifier MicroAmplifier(TM) Series 14-TSSOP
中文描述： npn型表面貼裝達林頓晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 62K
代理商： MMBTA28
DS30367 Rev. 2 - 2
1 of 3
MMBTA28
www.diodes.com
MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Mechanical Data
Case: SOT-23, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K6R
Weight: 0.008 grams (approx.)
Ordering & Date Code Information: See Page 2
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
MMBTA28
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
C/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
D
K
C
B
E
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
80
12
80
V
V
V
nA
nA
I
C
= 100 A I
E
= 0
I
E
= 100 A I
C
= 0
I
C
= 100 A I
B
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 10V, I
C
= 0
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
10,000
10,000
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 100 A
I
C
= 100mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0 Typical
15 Typical
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 5.0V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
125
MHz
Notes:
2. Short duration test pulse used to minimize self-heating effect.T
相關(guān)PDF資料
PDF描述
MMBTH10-4LT1 VHF/UHF Transistor (NPN Silicon)
MMBTH10L VHF/UHF Transistor
MMBTH10LT1 VHF/UHF Transistor
MMBV2109LT1 Silicon Tuning Diodes
MMBV2109LT1 Silicon Tuning Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA28 制造商:Fairchild Semiconductor Corporation 功能描述:SSOT-3 NPN:ROHS COMPLIANT
MMBTA28_Q 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA28-7 功能描述:達林頓晶體管 80V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA28-7-F 功能描述:達林頓晶體管 80V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA3904,215 制造商:NXP Semiconductors 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。