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參數(shù)資料
| 型號： | MMBT2222ATTD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MMBT2222ATTD |
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 2
1
Publication Order Number:
MMBT2222ATT1/D
MMBT2222ATT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT416/SC75 package which
is designed for low power surface mount applications.
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
75
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
T
A
= 25
°
C
P
D
150
mW
Thermal Resistance,
JunctiontoAmbient
R
θ
JA
833
°
C/W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device
Package
Shipping
ORDERING INFORMATION
MMBT2222ATT1
SOT416
CASE 463
SOT416/SC75
STYLE 1
3000 / Tape & Reel
MARKING DIAGRAM
3
2
1
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1P M
1P
M
= Specific Device Code
= Date Code
1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222AT-TP | 功能描述:兩極晶體管 - BJT 600mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Silicon General Purpose Transistor |
| MMBT2222AW_10 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT2222AWT1 | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AWT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
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