參數(shù)資料
型號： MMBT3906L
廠商： ON SEMICONDUCTOR
英文描述： General Purpose Transistor(NPN Silicon)
中文描述： 通用晶體管（NPN硅）
文件頁數(shù)： 1/6頁
文件大?。?/td> 101K
代理商： MMBT3906L
Semiconductor Components Industries, LLC, 2004
February, 2004 Rev. 5
1
Publication Order Number:
MMBT3904LT1/D
MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance Junction to Ambient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to
+150
°
C
1. FR5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMBT3904LT1
SOT23
3000 / Tape & Reel
MMBT3904LT1G
SOT23
3000 / Tape & Reel
MMBT3904LT3
SOT23
10000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT23 (TO236)
CASE 318
Style 6
MARKING
DIAGRAM
3
2
1
1AM
1AM
= Specific Device Code
MMBT3904LT3G
SOT23
10000 / Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3906L-AE3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION
MMBT3906L-AL3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION
MMBT3906LP 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3906LP-7 功能描述:兩極晶體管 - BJT BIPOLAR TRANS PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906LP-7B 功能描述:兩極晶體管 - BJT General Purpose Tran X1-DFN1006-3,10K RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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