參數(shù)資料
型號: MCIMX31VMN5CR2
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 532 MHz, MICROPROCESSOR, PBGA473
封裝: 19 X 19 MM, 0.80 MM PITCH, ROHS COMPLIANT, MAPBGA-473
文件頁數(shù): 72/122頁
文件大?。?/td> 1418K
代理商: MCIMX31VMN5CR2
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
53
Figure 38. Mobile DDR SDRAM Write Cycle Timing Diagram
NOTE
SDRAM CLK and DQS related parameters are being measured from the
50% point—that is, high is defined as 50% of signal value and low is defined
as 50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 38 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
Table 38. Mobile DDR SDRAM Write Cycle Timing Parameters1
1 Test condition: Measured using delay line 5 programmed as follows: ESDCDLY5[15:0] = 0x0703.
ID
Parameter
Symbol
Min
Max
Unit
SD17
DQ and DQM setup time to DQS
tDS
0.95
ns
SD18
DQ and DQM hold time to DQS
tDH
0.95
ns
SD19
Write cycle DQS falling edge to SDCLK output delay time.
tDSS
1.8
ns
SD20
Write cycle DQS falling edge to SDCLK output hold time.
tDSH
1.8
ns
SDCLK
DQS (output)
DQ (output)
DQM (output)
Data
DM
SD17
SD18
SD19
SD20
Because
of
an
order
from
the
United
States
International
Trade
Commission,
BGA-packaged
product
lines
and
part
numbers
indicated
here
currently
are
not
available
from
Freescale
for
import
or
sale
in
the
United
States
prior
to
September
2010:
i.MX31
Product
Family
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