參數(shù)資料
型號： MC8610VT800GB
廠商： Freescale Semiconductor
文件頁數(shù)： 24/96頁
文件大?。?/td> 0K
描述： MPU E600 CORE 800MHZ 783-PBGA
標(biāo)準(zhǔn)包裝： 36
系列： MPC86xx
處理器類型： 32-位 MPC86xx PowerPC
速度： 800MHz
電壓： 1V
安裝類型： 表面貼裝
封裝/外殼： 783-BBGA，F(xiàn)CBGA
供應(yīng)商設(shè)備封裝： 783-FCPBGA（29x29）
包裝： 托盤
MPC8610 Integrated Host Processor Hardware Specifications, Rev. 2
Electrical Characteristics
Freescale Semiconductor
30
NOTE
For the ADDR/CMD setup and hold specifications in Table 22, it is assumed that the clock
control register is set to adjust the memory clocks by 1/2 applied cycle.
Figure 5 shows the DDR SDRAM output timing for the MCK to MDQS skew measurement (tDDKHMH).
Figure 5. Timing Diagram for tDDKHMH
MDQS epilogue end
tDDKHME
–0.6
0.6
ns
6
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. This will typically be set to the same delay as the clock adjust in
the CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the same
adjustment value. See the
MPC8610 Integrated Host Processor Reference Manual, for a description and understanding of
the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[
n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
7. Maximum DDR1 frequency is 400 MHz.
8. Per the JEDEC spec the DDR2 duty cycle at 400 and 533 MHz is the low and high cycle time values.
Table 22. DDR SDRAM Output AC Timing Specifications (continued)
At recommended operating conditions.
Parameter
Symbol1
Min
Max
Unit
Notes
MDQS
MCK[
n]
MCK[
n]
tMCK
tDDKHMHmax) = 0.6 ns
tDDKHMH(min) = –0.6 ns
MDQS
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