參數(shù)資料
型號： MC68L11F1CFN3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 8-BIT, EEPROM, MICROCONTROLLER, PQCC68
封裝： PLASTIC, LCC-68
文件頁數(shù)： 124/174頁
文件大小： 981K
代理商： MC68L11F1CFN3
MC68HC11F1
OPERATING MODES AND ON-CHIP MEMORY
MOTOROLA
TECHNICAL DATA
4-15
Recall that zeros must be erased by a separate erase operation before programming.
The following example of how to program an EEPROM byte assumes that the appro-
priate bits in BPROT have been cleared and the data to be programmed is present in
accumulator A.
4.4.1.2 EEPROM Bulk Erase
To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared,
then complete the following steps using the PPROG register:
1. Write to PPROG with the ERASE, EELAT, and appropriate BYTE and ROW
bits set.
2. Write to the appropriate EEPROM address with any data. Row erase only re-
quires a write to any location in the row. Bulk erase is accomplished by writing
to any location in the array.
3. Write to PPROG with ERASE, EELAT, EEPGM, and the appropriate BYTE and
ROW bits set.
4. Delay for 10 ms or more, as appropriate.
5. Clear the EEPGM bit in PPROG to turn off the high voltage.
6. Return to step 1 for next byte or row or proceed to step 7.
7. Clear the PPROG register to reconfigure the EEPROM address and data buses
for normal operation.
The following is an example of how to bulk erase the 512-byte EEPROM. The CONFIG
register is not affected in this example. When bulk erasing the CONFIG register, CON-
FIG and the 512-byte array are all erased.
4.4.1.3 EEPROM Row Erase
The following example shows how to perform a fast erase of large sections of EE-
PROM and assumes that index register X contains the address of a location in the de-
sired row.
PROG
LDAB
#$02
EELAT=1, EEPGM=0
STAB
$103B
Set EELAT bit
STAA
$FE00
Store data to EEPROM address
LDAB
#$03
EELAT=1, EEPGM=1
STAB
$103B
Turn on programming voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
BULKE
LDAB
#$06
ERASE=1, EELAT=1, EEPGM=0
STAB
$103B
Set EELAT bit
STAB
$FE00
Store any data to any EEPROM address
LDAB
#$07
EELAT=1, EEPGM=1
STAB
$103B
Turn on programming voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
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相關代理商/技術參數(shù)
參數(shù)描述
MC68L11F1CFNE3 功能描述:8位微控制器 -MCU 8B MCU 1KRAM 512BYTES RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC68L11K1FN2R2 制造商:Motorola Inc 功能描述:
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MC68L711E9FN2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MC68L711E9FNE2 功能描述:8位微控制器 -MCU 8B MCU LO VOLTAGE RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
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