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參數(shù)資料
| 型號： | MBM30LV0128-PFTR |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 128 M (16 M X 8) BIT NAND-type |
| 中文描述： | 16M X 8 FLASH 2.7V PROM, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP-48 |
| 文件頁數(shù)： | 35/43頁 |
| 文件大小： | 397K |
| 代理商： | MBM30LV0128-PFTR |
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MBM30LV0064
35
(12) Invalid block (bad block)
The device contains unusable blocks. Therefore, the following issues must be recognized:
(13) Failure Phenomena for Program and Erase Operations
Repeated rewriting might cause an error at programming and erasing. Possible error modes, and detection
methods and remedies are listed in the following table. System-based remedies will provide a highly reliable
system.
* : (1) or (2)
ECC
:
Error Correcting code
→
Hamming Code etc.
Example : 1 bit correction & 2 bit detection.
Block Replacement
Erase
If an error occurs at erasing, like programming, remedies should be executed on a system basis to prevent
access to blocks causing the error.
Failure Mode
Detection and Countermeasure Sequence
Block
Erase Failure
Status Read after Erase
→
Block Replacement
Page
Program Failure
Status Read after Prog.
→
Block Replacement
Single Bit*
Program Failure
‘1’
→
‘0’
(1) Block Verify after Prog.
→
Retry
(2) ECC
Bad Block
Bad Block
Valid (Good) Block Number
Min.
1014
Typ.
1020
Max.
1024
Unit
Block
Figure 36. Shows the Bad Block Test Flow
Some MBM30LV0064 products have invalid blocks (bad blocks) at
shipping. After mounting the device in the system, test whether
there are no bad blocks. If there are any bad blocks, they should
not be accessed.
The bad blocks are connected to sense-amp of the bit lines via the
selector transistors. Good blocks will not be affected unless the bad
blocks are accessed. The effective number of good blocks
specified by Fujitsu is shown below.
Figure 34 Bad Block
Program
Buffer
Memory
error occurs
Block A
Block B
If an error occurs in block A, reprogramming from
the external buffer to block B. Block A should not
be accessed after an error occurs.
Figure 35 Reprogramming to Good Block
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