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參數(shù)資料
| 型號(hào)： | MBDF1200Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | 3A,20V TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate(3A,20V TMOS N溝道功率MOSFET（帶單片齊納ESD保護(hù)門）) |
| 中文描述： | 第3A，20V的TMOS是雙N溝道與單片ESD保護(hù)齊納門第（3A，20V的TMOS是?溝道功率MOSFET的（帶單片齊納的ESD保護(hù)門）） |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 187K |
| 代理商： | MBDF1200Z |
9
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 948J–01
TSSOP–8
ISSUE O
SECTION N–N
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MIN
2.90
4.30
–––
0.05
0.50
0.65 BSC
0.50
0.09
0.09
0.19
0.19
6.40 BSC
0
MAX
3.10
4.50
1.20
0.15
0.75
MIN
0.114
0.169
–––
0.002
0.020
0.026 BSC
0.020
0.004
0.004
0.007
0.007
0.252 BSC
0
MAX
0.122
0.177
0.047
0.006
0.030
INCHES
MILLIMETERS
0.60
0.20
0.16
0.30
0.25
0.024
0.008
0.006
0.012
0.010
8
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
SEATING
PLANE
IDENT.
PIN 1
1
4
8
5
SEE DETAIL E
J J1
B
C
D
A
K
H
G
éé
éé
DETAIL E
F
M
L
2X
L/2
–U–
S
U
0.15 (0.006) T
S
U
0.15 (0.006) T
S
U
M
0.10 (0.004)
V
S
T
0.10 (0.004)
–T–
–V–
–W–
0.25 (0.010)
8x REF
N
N
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