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參數(shù)資料
| 型號： | MBDF1200Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | 3A,20V TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate(3A,20V TMOS N溝道功率MOSFET（帶單片齊納ESD保護門）) |
| 中文描述： | 第3A，20V的TMOS是雙N溝道與單片ESD保護齊納門第（3A，20V的TMOS是?溝道功率MOSFET的（帶單片齊納的ESD保護門）） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 187K |
| 代理商： | MBDF1200Z |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
R
R
0
0
0.2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1
0
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
0.06
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10
1000
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
0.04
2
1
0.02
TJ = 25
°
C
4
8
10
2
1
1.5
2
0.03
0
2
3
100
0
4
12
16
20
0.01
0.02
0.04
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1
4.5 V
VGS = 2.7 V
TJ = 25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
0
0.5
1
1.5
2
VGS =4.5 V
ID = 3.0 A
125
75
25
–25
VGS = 0 V
TJ = 125
°
C
100
°
C
0.6
1.8 V
1.4 V
ID = 3.0 A
TJ = 25
°
C
0.5
0
0
0.01
0.03
0.05
10000
0.4
3
4
5
6 V
4.5 V
3.5 V
VGS = 10V
0.07
2
4
6
8
10
0.06
4
5
100000
1
0.1
25
°
C
2.5 V
8
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