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參數(shù)資料
| 型號(hào)： | MBDF1200Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | 3A,20V TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate(3A,20V TMOS N溝道功率MOSFET（帶單片齊納ESD保護(hù)門(mén)）) |
| 中文描述： | 第3A，20V的TMOS是雙N溝道與單片ESD保護(hù)齊納門(mén)第（3A，20V的TMOS是?溝道功率MOSFET的（帶單片齊納的ESD保護(hù)門(mén)）） |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | MBDF1200Z |
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
Qg, TOTAL GATE CHARGE (nC)
0
5
10
3
15
ID = 3.0 A
TJ = 25
°
C
VGS
5
1
0
12
0
VDS
QT
Q1
Q3
20
V
t
RG, GATE RESISTANCE (OHMS)
1
100
10
VDD = 8.0 V
ID = 3.0 A
VGS = 4.5 V
TJ = 25
°
C
td(on)
tr
100
10
td(off)
tf
3
2
15
1000
6
9
Q2
4
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
0.6
0
0.5
1
1.5
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
VGS = 0 V
TJ = 25
°
C
0.8
1
2
2.5
3
0.4
0.2
0
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