參數(shù)資料
型號(hào)： MBR150
廠商： MOTOROLA INC
元件分類： 參考電壓二極管
英文描述： Axial Lead Rectifiers
中文描述： 1 A, 50 V, SILICON, SIGNAL DIODE
文件頁數(shù)： 1/4頁
文件大小： 95K
代理商： MBR150
1
Rectifier Device Data
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220
°
C
Max. for 10 Seconds, 1/16
″
from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode Indicated by Polarity Band
Marking: B150, B160
MAXIMUM RATINGS
Rating
Symbol
MBR150
MBR160
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
60
Volts
RMS Reverse Voltage
VR(RMS)
IO
35
42
Volts
Average Rectified Forward Current (2)
(VR(equiv)
0.2 VR(dc), TL = 90
°
C, R
θ
JA = 80
°
C/W, P.C. Board Mounting,
see Note 3, TA = 55
°
C)
1
Amp
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70
°
C)
IFSM
25 (for one cycle)
Amps
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
TJ, Tstg
TJ(pk)
65 to +150
°
C
Peak Operating Junction Temperature (Forward Current applied)
150
°
C
THERMAL CHARACTERISTICS
(Notes 3 and 4)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θ
JA
80
°
C/W
ELECTRICAL CHARACTERISTICS
(TL = 25
°
C unless otherwise noted) (2)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1 A)
(iF = 3 A)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(TL = 25
°
C)
(TL = 100
°
C)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″
from case.
vF
0.550
0.750
1.000
Volt
iR
0.5
5
mA
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBR150/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
50, 60 VOLTS
CASE 59–04
PLASTIC
MBR160 is a
Motorola Preferred Device
Rev 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR150_ R2 _10001 制造商:PanJit Touch Screens 功能描述:
MBR150G 功能描述:肖特基二極管與整流器 1A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR150G 制造商:ON Semiconductor 功能描述:Schottky Rectifier
MBR150RL 功能描述:肖特基二極管與整流器 1A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR150RLG 功能描述:肖特基二極管與整流器 1A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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