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參數(shù)資料
| 型號： | MBDF1200Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | 3A,20V TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate(3A,20V TMOS N溝道功率MOSFET（帶單片齊納ESD保護(hù)門）) |
| 中文描述： | 第3A，20V的TMOS是雙N溝道與單片ESD保護(hù)齊納門第（3A，20V的TMOS是?溝道功率MOSFET的（帶單片齊納的ESD保護(hù)門）） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 187K |
| 代理商： | MBDF1200Z |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
20
—
—
10
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
10 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
5.0
50
μ
Adc
IGSS
—
—
3.0
μ
Adc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(1) (3)
VGS(th)
0.5
—
0.7
2.6
1.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 3.0 Adc)
(VGS = 2.5 Vdc, ID = 1.5 Adc)
(Cpk
≥
2.0)
(1) (3)
RDS(on)
—
—
32
44
38
50
m
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.5 Adc)
(1)
gFS
5.0
6.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
16 Vdc V
Ciss
Coss
Crss
—
330
470
pF
Output Capacitance
—
270
380
Transfer Capacitance
—
95
140
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 8 0 Vd
(DD
VGS = 4.5 Vdc, RG = 6.0
) (1)
3 0 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
19
38
ns
Rise Time
—
148
296
Turn–Off Delay Time
,I
,
—
350
700
Fall Time
—
340
680
Gate Charge
(VDD = 12 Vd
(DD
VGS = 10 Vdc) (1)
I
3 0 Ad
—
16
24
nC
—
1.5
—
,D
,
—
2.3
—
—
2.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.80
0.65
1.0
—
Vdc
Reverse Recovery Time
(IS = 3 0 Adc V
s) (1)
dIS/dt = 100 A/
μ
s) ( )
0 Vdc
trr
—
340
—
ns
ta
tb
—
120
—
—
220
—
Reverse Recovery Storage Charge
QRR
—
1.7
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Max limit – Typ
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