*1 : TA = + 25 掳C, V" />
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� MB95F136JBWPF-GE1
寤犲晢锛� Fujitsu Semiconductor America Inc
鏂囦欢闋�(y猫)鏁�(sh霉)锛� 54/64闋�(y猫)
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC MCU 32KB FLASH 28SOP
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 1
绯诲垪锛� F²MC MB95130MB
鏍稿績铏曠悊鍣細 F²MC-8FX
鑺珨灏哄锛� 8-浣�
閫熷害锛� 16MHz
閫i€氭€э細 LIN锛孲IO锛孶ART/USART
澶栧湇瑷�(sh猫)鍌欙細 LVD锛孭OR锛孭WM锛學DT
杓稿叆/杓稿嚭鏁�(sh霉)锛� 19
绋嬪簭瀛樺劜(ch菙)鍣ㄥ閲忥細 32KB锛�32K x 8锛�
绋嬪簭瀛樺劜(ch菙)鍣ㄩ鍨嬶細 闁冨瓨
RAM 瀹归噺锛� 1K x 8
闆诲 - 闆绘簮 (Vcc/Vdd)锛� 2.4 V ~ 5.5 V
鏁�(sh霉)鎿�(j霉)杞�(zhu菐n)鎻涘櫒锛� A/D 8x8/10b
鎸暕鍣ㄥ瀷锛� 澶栭儴
宸ヤ綔婧害锛� -40°C ~ 105°C
灏佽/澶栨锛� 28-SOP
鍖呰锛� 绠′欢
鍏跺畠鍚嶇ū锛� 865-1075
MB95130MB Series
58
6.
Flash Memory Program/Erase Characteristics
*1 : TA
= + 25 掳C, VCC = 5.0 V, 10000 cycles
*2 : TA
= + 85 掳C, VCC = 4.5 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+85 掳C) .
Parameter
Value
Unit
Remarks
Min
Typ
Max
Chip erase time
1.0*1
15.0*2
s
Excludes 00H programming prior erasure.
Byte programming time
32
3600
s
Excludes system-level overhead.
Erase/program cycle
10000
cycle
Power supply voltage at erase/
program
4.5
5.5
V
Flash memory data retention
time
20*3
year
Average TA
= +85 掳C
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
MB95F156JJPMC1-GE1 IC MCU FLASH 32K ROM 52LQFP
MB95F168JAPMC-GE1 IC MCU FLASH 60K ROM 64LQFP
MB95F204KP-G-SH-SNE2 IC MCU 16KB FLASH F2MC8FX 24SDIP
MB95F223KPH-G-SNE2 IC MCU 8KB FLASH F2MC-8FX 16DIP
MB95F263KPF-G-SNE2 IC MCU 8BIT 12KB FLASH 20SOP
鐩搁棞(gu膩n)浠g悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
MB95F136JBWPFV 鍒堕€犲晢:FUJITSU 鍒堕€犲晢鍏ㄧū:Fujitsu Component Limited. 鍔熻兘鎻忚堪:8-bit Microcontrollers
MB95F136JS 鍒堕€犲晢:FUJITSU 鍒堕€犲晢鍏ㄧū:Fujitsu Component Limited. 鍔熻兘鎻忚堪:8-bit Proprietary Microcontrollers
MB95F136JSPFV-GE1 鍒堕€犲晢:FUJITSU 鍔熻兘鎻忚堪:8BIT MCU 32K FLASH 1K RAM SOP28
MB95F136JW 鍒堕€犲晢:FUJITSU 鍒堕€犲晢鍏ㄧū:Fujitsu Component Limited. 鍔熻兘鎻忚堪:8-bit Proprietary Microcontrollers
MB95F136KSPF-GE1 鍒堕€犲晢:FUJITSU 鍔熻兘鎻忚堪: