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參數(shù)資料
| 型號(hào)： | M6MGB166S4BWG |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁(yè)數(shù)： | 3/30頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | M6MGB166S4BWG |
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Nov. 1999 , Rev.3.2
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S4BWG
3
DESCRIPTION
The Flash Memory of M6MGB/T166S4BWG is 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating
BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank
while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and
personal computing, and communication products. The Flash Memory of M6MGB/T166S4BWG is fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells.
FEATURES
Boot Block
M6MGB166S4BWG Bottom Boot
M6MGT166S4BWG Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Auto Power Down Mode
Organization 1048,576 word x 16bit
Supply voltage
................................
V
CC
= 2.7~3.6V
Access time 90ns (Max.)
Power Dissipation
Read 54 mW (Max. at 5MHz)
(After Automatic Power Down) 0.33
m
W (typ.)
Program/Erase 126 mW (Max.)
Standby 0.33
m
W (typ.)
Deep power down mode 0.33
m
W (typ.)
Auto program for Bank(I)
Program Time 4ms (typ.)
Program Unit
(Byte Program) 1word
(Page Program) 128word
Auto program for Bank(II)
Program Time 4ms (typ.)
Program Unit 128word
Auto Erase
Erase time 40 ms (typ.)
Erase Unit
Bank(I) Boot Block 16Kword x 1
Parameter Block 16Kword x 7
Bank(II) Main Block 32Kword x 28
Program/Erase cycles 100Kcycles
1. Flash Memory
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGB331S4BKT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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