參數(shù)資料
型號: M6MGB166S4BWG
廠商: Mitsubishi Electric Corporation
英文描述: CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述: 3.3的CMOS只快閃記憶體
文件頁數(shù): 15/30頁
文件大小: 253K
代理商: M6MGB166S4BWG
Nov. 1999 , Rev.3.2
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S4BWG
15
AC WAVEFORMS FOR WORD PROGRAM OPERATION (F-WE# control) (to only BANK(I))
WRITE READ
ARRAY COMMAND
READ STATUS
REGISTER
V
IH
V
IL
ADDRESS
VALID
t
AS
PROGRAM
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IH
V
IL
F-RP#
V
IH
V
IL
F-WP#
V
IL
40H
DIN
t
CS
t
CH
t
WPH
t
WP
t
DS
t
PS
t
DAP
t
WHRL
t
OEH
t
a(CE)
t
a(OE)
t
BLH
t
DH
SRD
FFH
t
AH
t
WC
t
BLS
BANK(I) ADDRESS VALID
BAN VALID
AC WAVEFORMS FOR WORD PROGRAM OPERATION (F-CE# control) (to only BANK(I))
WRITE READ
ARRAY COMMAND
READ STATUS
REGISTER
V
IH
V
IL
ADDRESSES
ADDRESS
VALID
t
AS
PROGRAM
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IH
V
IL
F-RP#
V
IH
V
IL
V
IL
40H
DIN
t
WS
t
WH
t
CEP
t
DS
t
PS
t
DAP
t
EHRL
t
OEH
t
a(CE)
t
a(OE)
t
BLH
t
DH
SRD
FFH
t
AH
t
WC
t
BLS
BANK(I) ADDRESS VALID
F-WP#
BAN VALID
ADDRESSES
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