參數(shù)資料
型號(hào)： M6MGB166S4BWG
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述： 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù)： 27/30頁(yè)
文件大?。?/td> 253K
代理商： M6MGB166S4BWG
Nov. 1999 , Rev.3.2
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S4BWG
27
(4)TIMING DIAGRAMS
Read cycle
t
a
(A)
t
a
(LB)
t
v
(A)
t
dis
(LB) or
t
dis
(UB)
t
a
(OE)
t
en
(OE)
t
dis
(OE)
t
CR
t
en
(CE1)
t
en
(CE2)
S-WE# = "H" level
DQ
0~15
A
0~16,
S-A
17
S-OE#
(Note3)
(Note3)
(Note3)
(Note3)
VALID DATA
t
a
(CE1)
t
dis
(CE1)
S-CE1#
(Note3)
(Note3)
t
a
(UB)
or
t
en
(UB)
t
en
(LB)
t
a
(CE2)
t
dis
(CE2)
S-CE2
(Note3)
(Note3)
S-CE2
(Note3)
(Note3)
t
su
(CE2)
t
en
(W)
t
h
(D)
t
su
(D)
DQ
0~15
t
su
(LB) or
t
su
(UB)
t
en
(OE)
t
dis
(OE)
t
w
(W)
t
rec
(W)
t
su
(A)
t
dis
(W)
t
CW
S-OE#
S-WE#
Write cycle
(S-WE# control mode)
DATA IN
STABLE
(Note3)
(Note3)
t
su
(A-WH)
S-CE1#
(Note3)
(Note3)
t
su
(CE1)
S-LB#,
S-UB#
A
0~16,
S-A
17
S-LB#,
S-UB#
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