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參數(shù)資料
| 型號： | M6MGB160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 1/30頁 |
| 文件大小： | 258K |
| 代理商： | M6MGB160S2BVP |
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Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
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DESCRIPTION
The MITSUBISHI M6MGB/T160S2BVP is a Stacked Multi
Chip Package (S-MCP) that contents 16M-bits flash memory
and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 2097152 bytes /1048576 words,
3.3V-only, and high performance non-volatile memory
fabricated by CMOS technology for the peripheral circuit
and DINOR(DIvided bit-line NOR) architecture for the
memory cell.
2M-bits SRAM is a 262144 bytes / 131072 words
unsynchronous SRAM fabricated by silicon-gate CMOS
technology.
M6MGB/T160S2BVP is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight .
Access time
Flash Memory 90ns (Max.)
SRAM 85ns (Max.)
Supply voltage Vcc=2.7 ~ 3.6V
Ambient temperature
W version Ta=-20 ~ 85
°
C
Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch
APPLICATION
Mobile communication products
FEATURES
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14.0 mm
PIN CONFIGURATION (TOP VIEW)
F-VCC
S-VCC
:Vcc for Flash
:Vcc for SRAM
GND
A-1-A16
A17-A19
DQ0-DQ15
:GND for Flash/SRAM
:Flash/SRAM common Address
:Address for Flash
:Data I/O
F-CE#
S-CE
OE#
:Flash Chip Enable
:SRAM Chip Enable
:Flash/SRAM Output Enable
WE#
F-WP#
F-RP#
F-RY/BY#
BYTE#
:Flash/SRAM Write Enable
:Flash Write Protect
:Flash Reset Power Down
:Flash Ready /Busy
:Flash/SRAM Byte Enable
NC:Non Connection
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A16
BYTE#
GND
DQ15/A-1
A0
OE#
F-CE#
DQ0
DQ1
DQ9
DQ11
DQ10
F-VCC
DQ12
DQ13
DQ14
A17
A7
A6
A5
A4
A3
F-RY/A18
A10
A9
A8
A19
S-CE
A15
A14
A13
A11
F-RP#
F-WP#
A1
A2
WE#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M6MGT160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGB160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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