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參數(shù)資料
| 型號： | M6MGB160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 30/30頁 |
| 文件大?。?/td> | 258K |
| 代理商： | M6MGB160S2BVP |
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Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
POWER DOWN CHARACTERISTICS
t
su (PD)
t
rec (PD)
ns
ms
(2) TIMING REQUIREMINTS
Symbol
Parameter
Test conditions
Limits
Typ
Min
0
5
Max
Units
Power down set up time
Power down recovery time
(3) TIMING DIAGRAM
S-CE control mode
S-Vcc
0.2V
t
su (PD)
2.7V
2.7V
0.2V
t
rec (PD)
S-CE
30
(1) ELECTRICAL CHARACTERISTICS
V
V
m
A
2.0
S-Vcc
(PD)
V
I (CE)
Symbol
Parameter
Test conditions
Limits
Typ
Min
Max
Units
Power down supply voltage
Chip select input S-CE
0.2
24
Typical value is for Ta=25 C
Icc
(PD)
+25 ~ +40 C
-20 ~ +25 C
-W
8
3
0.3
1
1
-
-
-
-
-
-
m
A
m
A
m
A
Power down
supply current
S-Vcc=3.0V
S-CE>
other =
+40 ~ +70 C
+70 ~ +85 C
(2) TIMING DIAGRAM
S-CE
BYTE# TIMING DIAGRAM
t
su (BYTE)
t
rec (BYTE)
ms
(1) TIMING REQUIREMINTS
Symbol
Parameter
Test conditions
Limits
Typ
Min
5
Max
Units
BYTE# set up time
BYTE# recovery time
5
ms
t
su (BYTE)
t
rec (BYTE)
BYTE#
S-CE<
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M6MGT160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGB160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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