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參數(shù)資料
| 型號： | M6MGB160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 26/30頁 |
| 文件大小： | 258K |
| 代理商： | M6MGB160S2BVP |
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Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
ABSOLUTE MAXIMUM RATINGS
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating
temperature
Storage temperature
V
mW
C
C
Conditions
With respect to GND
With respect to GND
With respect to GND
Ta=25 C
700
- 20 ~ +85
- 65 ~ +150
Ratings
-0.5
*
~ +4.6
-0.5
*
~ S-Vcc + 0.5
0 ~ S-Vcc
S-Vcc
V
I
V
O
P
d
T
a
T
stg
Symbol
Parameter
Units
W-version
* -3.0V in case of AC (Pulse width<
DC ELECTRICAL CHARACTERISTICS
( S-Vcc=2.7 ~ 3.6V, unless otherwise noted)
* -3.0V in case of AC (Pulse widt<
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for S-Vcc=3.0V and Ta=25 C
Symbol
Parameter
Limits
Conditions
Units
m
A
mA
m
A
mA
V
Icc
1
Icc
2
Icc
4
V
IH
V
IL
V
OH1
V
OH2
V
OL
I
I
I
O
Icc
3
I
OH
= -0.5mA
I
OH
= -0.05mA
I
OL
=2mA
V
I
=0
~
S-Vcc
S-CE=V
IL
or OE#=V
IH
, V
I/O
=0 ~ S-Vcc
S-Vcc+0.3V
0.6
2.0
-0.3 *
2.4
S-Vcc-0.5V
0.5
0.4
±
1
±
1
60
15
60
15
30
10
45
5
45
5
Max
Typ
Min
f= 10MHz
f= 1MHz
f= 10MHz
f= 1MHz
-
-
-
-
-
-
-
-
-
-
High-level input voltage
Low-level input voltage
High-level output voltage 1
High-level output voltage 2
Low-level output voltage
Input leakage current
Output leakage current
Active supply current
( AC,MOS level )
Active supply current
( AC,TTL level )
Stand by supply current
( AC,MOS level )
( AC,TTL level )
Stand by supply current
Other inputs= 0 ~ S-Vcc
other inputs 0.2V or S-Vcc-0.2V
Output - open (duty 100%)
S-CE=V
IH
other pins =V
IH or
V
IL
Output - open (duty 100%)
S-CE S-Vcc-0.2V
<
<
>
Other inputs=0~S-Vcc
S-CE 0.2V
S-CE=V
IL
+70 ~ +85 C
-W
pF
8
10
V
I
=GND, V
I
=25mVrms, f=1MHz
V
O
=
GND,V
O
=25mVrms, f=1MHz
C
I
C
O
(S-Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
Limits
Typ
Max
Min
Units
Input capacitance
Output capacitance
CAPACITANCE
26
- 20 ~ +25 C
-
0.3
2
+25 ~ +40 C
-
1
5
+40 ~ +70 C
Note: The value of common pins to SRAM is the sum of Flash Memory and SRAM.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGB160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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