參數(shù)資料
型號(hào)： M6MGB160S2BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù)： 29/30頁(yè)
文件大小： 258K
代理商： M6MGB160S2BVP
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
Note 3: Hatching indicates the state is "don't care".
Note 5: Don't apply inverted phase signal externally when DQ pin is in output mode.
Note 4: When the falling edge of WE# is simultaneously or priorto the rising edge of S- CE,
the outputs are maintained in the high impedance state.
Write cycle (S-CE control mode)
t
CW
A
0~16
(Word Mode)
A
-1~16
(Byte Mode)
t
h
(D)
t
su
(D)
t
su
(CE)
t
rec
(W)
t
su
(A)
WE#
S-CE
DATA IN
STABLE
(Note3)
(Note3)
(Note4)
DQ
0~15
(Word Mode)
DQ
0~7
(Byte Mode)
29
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB160S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB162S2BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
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