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參數(shù)資料
| 型號： | M6MGB160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 20/30頁 |
| 文件大?。?/td> | 258K |
| 代理商： | M6MGB160S2BVP |
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Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
20
AC WAVEFORMS FOR BLOCK ERASE OPERATION WITH BGO (WE# control)
ARRAY READ FROM THE OTHER
BANK WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESSES
ADDRESS VALID
F-CE#
OE#
WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IL
20H
D0H
DOUT
SRD
VALID
VALID
t
WC
t
AS
t
AH
t
CS
t
CH
t
WPH
t
WP
t
DS
t
DH
t
WHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
BLOCK ERASE IN
ONE BANK
READ STATUS
REGISTER
Change Bank Address
BAN VALID
AC WAVEFORMS FOR BLOCK ERASE OPERATION WITH BGO (F-CE# control)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
OE#
WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IL
20H
D0H
DOUT
SRD
VALID
VALID
t
WC
t
AS
t
WS
t
CH
t
CEPH
t
CEP
t
DS
t
DH
t
EHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
ADDRESS VALID
t
AH
READ DATA FROM THE OTHER BANK
WITH BGO
ADDRESSES
BLOCK ERASE IN
ONE BANK
READ STATUS
REGISTER
Change Bank Address
BAN VALID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M6MGT160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGB160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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