- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376119 > M12S16161A (Electronic Theatre Controls, Inc.) 512K x 16Bit x 2Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | M12S16161A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 23/28頁 |
| 文件大?。?/td> | 871K |
| 代理商： | M12S16161A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁
ESMT
Burst Read Single bit Write Cycle @Burst Length=2
M12S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jun. 2005
Revision
:
1.0
23/28
*Note:1.BRSW modes is enabled by setting A9 “High” at MRS(Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to “1” regardless of programmed burst length.
2.When BRSW write command with auto precharge is executed, keep it in mind that t
RAS
should not be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge
command will be issued after two clock cycles.
C L O C K
C K E
A D D R
CL=2
DQ M
A10/AP
BA
RAa
RAc
RAa
QAb0
Row Active
(A-Bank)
W rite
(A-Bank)
:Don't Car e
HIGH
QAb1
Precharge
(A- Bank)
CAa
RBb
CAb
CBc
CAd
RAc
DBc0
DQ
DAa0
QAb0
DBc0
QAb1
CL=3
Row Active
(B-Bank)
Row Active
(A- Bank)
W rite with
Auto Pr echarge
( B-Bank)
Read
( A- Bank)
DAa0
QAd0 QAd1
QAd0 QAd1
*Not e 1
CS
RAS
CAS
W E
RBb
*Not e 2
Read with
Auto Precharge
(A-Bank)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12S16161A-10T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-10TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-15T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-15TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M1300 | Mini size of Discrete semiconductor elements |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12S16161A_07 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A_0707 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-10T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。