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參數(shù)資料
| 型號： | KM29W8000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 8 Bit NAND Flash Memory(1M x 8 位 NAND閃速存儲器) |
| 中文描述： | 100萬× 8位NAND快閃記憶體（1米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 18/23頁 |
| 文件大?。?/td> | 266K |
| 代理商： | KM29W8000T |
KM29W8000T, KM29W8000IT
FLASH MEMORY
18
Figure 5. Sequential Row Read1 Operation
Figure 4. Read2 Operation
50H
Busy(Seek Time)
A
0
~ A
2
& A
8
~ A
19
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Data Field
Spare Field
(GND=L, 00H Command)
Data Field
Spare Field
00H
A
0
~ A
7
& A
8
~ A
19
I/O
0
~
7
R/B
Start Add.(3Cycle)
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(264 Byte)
(264 Byte)
(A
3
~ A
7
:
Don
t Care)
1st
2nd
Nth
I/O
0
~
7
RE
Seek Time
t
R
t
R
t
R
≈
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