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參數(shù)資料
| 型號： | KM29W8000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 8 Bit NAND Flash Memory(1M x 8 位 NAND閃速存儲器) |
| 中文描述： | 100萬× 8位NAND快閃記憶體（1米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 16/23頁 |
| 文件大小： | 266K |
| 代理商： | KM29W8000T |
KM29W8000T, KM29W8000IT
FLASH MEMORY
16
BLOCK ERASE OPERATION
(ERASE ONE BLOCK)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
16
~ A
19
A
8
~ A
15
Auto Block Erase Setup Command
Erase Command
Read Status
Command
I/O
0
=1 Error in Erase
DOH
70H
I/O 0
Busy
t
WB
t
BERS
I/O
0
=0 Successful Erase
Page(Row)
Address
≈
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