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參數(shù)資料
| 型號(hào)： | KM29W32000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 8/17頁(yè) |
| 文件大?。?/td> | 239K |
| 代理商： | KM29W32000AT |
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KM29W32000AT, KM29W32000AIT
FLASH MEMORY
BLOCK ERASE OPERATION
(ERASE ONE BLOCK)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
17
~ A
21
A
9
~ A
16
Auto Block Erase Setup Command
Erase Command
Read Status
Command
I/O0=1 Error in Erase
DOH
70H
I/O
0
Busy
t
WB
t
BERS
t
WC
t
WC
Block
Address
I/O0=0 Successful Erase
SUSPEND & RESUME OPERATION DURING BLOCK ERASE
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
17
~ A
21
A
9
~ A
16
Auto Block Erase Setup Command
Program/Read
Function are
Acceptable
D0H
70H
I/O
0
Busy
B0H
D0H
t
WB
Block Address
Resume
Suspend
t
WB
t
RHW
t
SR
I/O
0
=0 Successful Erase
I/O
0
=1 Error in Erase
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29W32000AK1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000ATS | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000IT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000T | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000K1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
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