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參數(shù)資料
| 型號： | KM29W32000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 239K |
| 代理商： | KM29W32000AT |
KM29W32000AT, KM29W32000AIT
FLASH MEMORY
4M x 8 Bit NAND Flash Memory
The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash
Memory with a spare 128K(131,072)x8bit. Its NAND cell pro-
vides the most cost-effective solution for the solid state mass
storage market. A program operation programs the 528-byte
page in typically 250
μ
s and an erase operation can be per-
formed in typically 2ms on an 8K-byte block.
Data in the page can be read out at 50ns cycle time per byte.
The I/O pins serve as the ports for address and data input/out-
put as well as command inputs. The on-chip write controller
automates all program and erase system functions, including
pulse repetition, where required, and internal verify and margin-
ing of data. Even the write-intensive systems can take advan-
tage of the KM29W32000A extended reliability of one million
program/erase cycles by providing either ECC(Error Correction
Code) or real time mapping-out algorithm. These algorithms
have been implemented in many mass storage applications
and also the spare 16 bytes of a page combined with the other
512 bytes can be utilized by system-level ECC.
The KM29W32000A is an optimum solution for large nonvola-
tile storage application such as solid state storage, digital voice
recorder, digital still camera and other portable applications
requiring nonvolatility.
GENERAL DESCRIPTION
FEATURES
Voltage Supply : 2.7V ~ 5.5V
Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
- Status Register
528-Byte Page Read Operation
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 250
μ
s(typ.)
- Block Erase time : 2ms(typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- Forward Type
PIN CONFIGURATION
NOTE
: Connect all V
CC,
V
CC
Q and V
SS
pins of each device to power supply outputs.
Do NOT leave V
CC
or V
SS
disconnected.
V
SS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
V
CC
Q
I/O4
I/O5
I/O6
I/O7
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
SE
R/B
RE
CE
V
CC
23
24
25
26
27
28
29
31
32
33
34
35
36
37
38
39
40
41
42
43
44
44(40) TSOP (II)
STANDARD TYPE
Pin Name
Pin Function
I/O0 ~ I/O7
Data Inputs/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
SE
Spare area Enable
R/B
Ready/Busy output
V
CC
Power(2.7V ~ 5.5V)
V
CC
Q
Output Butter Power(2.7V ~ 5.5V)
V
SS
Ground
N.C
No Connection
PIN DESCRIPTION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29W32000AK1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
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| KM29W32000IT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000T | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000K1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
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