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參數(shù)資料
| 型號： | KM29W32000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 239K |
| 代理商： | KM29W32000AT |
KM29W32000AT, KM29W32000AIT
FLASH MEMORY
* Status Read Cycle
CE
WE
CLE
RE
I/O
0
~
7
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
70H
Status Output
t
CLS
t
CLH
t
CS
t
WP
t
CH
t
DS
t
DH
t
RSTO
t
IR
t
RHZ*
t
CHZ*
t
WHR
t
CSTO
t
CLS
READ1 OPERATION
(READ ONE PAGE)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
Busy
00h or 01h
A
0
~ A
7
A
9
~ A
16
A
17
~ A
21
Dout N
Dout N+1
Dout N+2
Dout N+3
Dout 527
Column
Address
Page(Row)
Address
t
WB
t
AR2
t
R
t
RC
t
RHZ
t
RR
t
CHZ
t
CEH
t
RB
t
CRY
t
WC
≈
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29W32000AK1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000ATS | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000IT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000T | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000K1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
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