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參數(shù)資料
| 型號(hào)： | KM29W32000AK1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | KM29W32000AK1 |
PREDVAN
Advance Information
FLASH MEMORY DIE
KM29W32000AK1
- 1 -
FEATURES
4M x 8 Bit NAND Flash Memory
OPTIONS
Bare Die : Functionally test only
GENERAL ORDERING INFORMATION
4M
×
8 2.7V ~ 5.5V Bare Die KM29W32000AK1
PACKAGING OPTIONS
Chip Trays (Waffle Pack)
FUNCTIONAL SPECIFICATIONS
Please refer to the packaged product data sheet found in the applicable SAMSUNG Flash Memory data book
for functional and parametric specifications. For bare die, these specifications are provided for reference only
and SAMSUNG makes no guarantees or warranties on level die.
ü
Voltage Supply : 2.7V ~ 5.5V
ü
Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
ü
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
ü
528-Byte Page Read Operation
ü
Command/Address/Data Multiplexed I/O port
ü
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
ü
Reliable CMOS Floating-Gate Technology
ü
Command Register Operation
RECOMMENDATION FOR SYSTEM DESIGN-IN
The KM29W32000AK1 is recommended that the use of ECC(Error Correcting Code) and real time mapping-out
algorithm for the high reliability.
The KM29W32000AK1 is an 4M(4,194,304)x8bit Die of NAND
Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell
provides the most cost-effective solution for the solid state mass
storage system. A program operation could be program the 528-
byte simultaneously and an erase unit is an 8K-byte block. In
read operation can support fast serial read out mode upto 528-
byte. The I/O pins serve as the ports for address and data input/
output as well as command inputs. That multiplexed I/O inter-
face can reduced the control pin counts and it gives a benefit for
the use of Die product. The on-chip write controller automates all
program and erase functions including pulse repetition, where
required, and internal verify and margining of data. The
KM29W32000AK1 is recommended that the use of ECC(Error
Correcting Code) and real time mapping-out algorithm for the
high reliability. These algorithms have been implemented in
many mass storage applications and also the spare 16 bytes of
a page combined with the other 512 bytes can be utilized by sys-
tem-level ECC.
The KM29W32000AK1 is an optimum solution for large nonvola-
tile storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
GENERAL DESCRIPTION
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