參數(shù)資料
型號(hào): K9W8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述: 512M × 8位/ 256M × 16位NAND閃存
文件頁(yè)數(shù): 6/38頁(yè)
文件大?。?/td> 601K
代理商: K9W8G08U1M
FLASH MEMORY
6
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
2K Bytes
64 Bytes
Figure 1-1. K9XXG08XXM (X8) Functional Block Diagram
Figure 2-1. K9XXG08XXM (X8) Array Organization
NOTE
: Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
8
A
9
A
10
A
11
*L
*L
*L
*L
3rd Cycle
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
19
4th Cycle
A
20
A
21
A
22
A
23
A
24
A
25
A
26
A
27
5th Cycle
A
28
A
29
*L
*L
*L
*L
*L
*L
V
CC
V
SS
X-Buffers
Latches
& Decoders
Command
Register
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
12
- A
29
A
0
- A
11
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 7
V
CC
V
SS
256K Pages
(=4,096 Blocks)
2K Bytes
8 bit
64 Bytes
1 Block = 64 Pages
(128K + 4k) Byte
I/O 0 ~ I/O 7
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 4096 Blocks
= 4224Mbits
Row Address
Page Register
ALE PRE
4096M + 128M Bit
NAND Flash
ARRAY
(2048 + 64)Byte x 262144
Y-Gating
Cache Register
Row Address
Column Address
Column Address
Data Register & S/A
Row Address
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