參數(shù)資料
型號(hào): K9W8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述: 512M × 8位/ 256M × 16位NAND閃存
文件頁(yè)數(shù): 28/38頁(yè)
文件大小: 601K
代理商: K9W8G08U1M
FLASH MEMORY
28
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
Read ID Operation
CE
CLE
WE
ALE
RE
90h
Read ID Command
Maker Code Device Code
00h
ECh
Device
Code*
t
REA
Address. 1cycle
XXh
4th cyc.*
ID Defintition Table
90 ID : Access command = 90H
Description
1
st
Byte
2
nd
Byte
3
rd
Byte
4
th
Byte
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
I/Ox
t
AR
Device
Device Code*(2nd Cycle)
4th Cycle*
K9K4G08Q0M
ACh
15h
K9K4G08U0M
DCh
15h
K9K4G16Q0M
BCh
55h
K9K4G16U0M
CCh
55h
K9W8G08U1M
Same as each K9K4G08U0M in it
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