參數(shù)資料
型號(hào): K9W8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述: 512M × 8位/ 256M × 16位NAND閃存
文件頁(yè)數(shù): 16/38頁(yè)
文件大?。?/td> 601K
代理商: K9W8G08U1M
FLASH MEMORY
16
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
(1)
(2)
(3)
(32)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
(2)
(32)
(3)
(1)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
NAND Flash Technical Notes
(Continued)
Addressing for program operation
:
:
:
:
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