參數(shù)資料
型號(hào): K9W8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述: 512M × 8位/ 256M × 16位NAND閃存
文件頁數(shù): 15/38頁
文件大?。?/td> 601K
代理商: K9W8G08U1M
FLASH MEMORY
15
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Write 30h
Block Replacement
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
1
2
相關(guān)PDF資料
PDF描述
K9K8G08U0M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9S2808V0B TV 29C 29#16 PIN RECP
K9S6408V0B SmartMedia CARD
K9S6408V0C SmartMedia CARD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9W8G08U1M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9WAG08U0D-S 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY 256*8 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell)
K9WAG08U1A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9WAG08U1A_067 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9WAG08U1A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory