參數(shù)資料
型號(hào): K5A3280YBC-T855
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MCP MEMORY
中文描述: MCP的記憶
文件頁(yè)數(shù): 35/45頁(yè)
文件大小: 625K
代理商: K5A3280YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 35 -
Preliminary
Flash SWITCHING WAVEFORMS
Chip/Block Erase Operations
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Write Cycle Time
t
WC
70
-
80
-
ns
Address Setup Time
t
AS
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
ns
Data Hold Time
t
DH
0
-
0
-
ns
OE Setup Time
t
OES
0
-
0
-
ns
CE
F
Setup Time
t
CS
0
-
0
-
ns
Write Pulse Width
t
WP
35
-
35
-
ns
Write Pulse Width High
t
WPH
25
-
25
-
ns
Read Cycle Time
t
RC
70
-
80
-
ns
Vcc
F
Set Up Time
t
VCS
50
-
50
-
μ
s
OE
Address
t
CS
CE
F
DATA
WE
t
AH
t
AS
t
RC
t
DS
t
DH
80H
AAH
AAH
55H
30H
10H for Chip Erase
555H
2AAH
555H
555H
2AAH
BA
555H for Chip Erase
t
WPH
t
WP
t
OES
55H
RY/BY
t
WC
t
VCS
Vcc
F
NOTE:
BA : Block Address
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