參數(shù)資料
型號： K5A3280YBC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數(shù)： 27/45頁
文件大?。?/td> 625K
代理商： K5A3280YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 27 -
Preliminary
DC CHARACTERISTICS
(Continued)
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component(at 5 MHz).
The read current is typically 14 mA (@ Vcc
F
=3.0V , OE at V
IH
.)
2. I
CC
active during Internal Routine(program or erase) is in progress.
3. I
CC
active during Read while Write is in progress.
4. The high voltage ( V
HH
or V
ID
) must be used in the range of Vcc
F
= 3.0V
±
0.3V
5. Not 100% tested.
6. Typical values are measured at Vcc
F
=
Vcc
S
= 3.0V, Ta=25
°
C , not 100% tested.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Flash
Automatic Sleep Mode
I
SB
3
V
IH
=Vcc
F
±
0.3V, V
IL
=V
SS
±
0.3V, OE=V
IL,
I
OL
=I
OH
=0
-
5
18
μ
A
Voltage for WP/ACC Block
Temporarily Unprotect and
Program Acceleration (4)
V
HH
Vcc
F
= 3.0V
±
0.3V
8.5
-
12.5
V
Voltage for Autoselect and
Block Protect (4)
V
ID
Vcc
F
= 3.0V
±
0.3V
8.5
-
12.5
V
Low Vcc
F
Lock-out Voltage (5)
V
LKO
1.8
-
2.5
V
SRAM
Operating Current
I
CC
1
Cycle time=1
μ
s, 100% duty, CS1
S
≤
0.2V,
CS2
S
≥
Vcc
S
-0.2V, LB
≤
0.2V and/or UB
≤
0.2V
All outputs open, V
IN
≤
0.2V or V
IN
≥
Vcc
S
-0.2V,
BYTE
S
=Vcc
S
±
0.3V or Vss
±
0.3V
-
-
3
mA
I
CC
2
Cycle time=Min, 100% duty, CS1
S
=V
IL
, CS2
S
=V
IH
,
LB
=
V
IL
and/or UB=
V
IL
,
All outputs open, V
IN
=V
IL
or
V
IH,
BYTE
S
=Vcc
S
±
0.3V or Vss
±
0.3V
-
22
28
mA
Standby Current
I
SB
CS1
S
≥
Vcc
S
-0.2V, CS2
S
≥
Vcc
S
-0.2V (CS1
S
controlled)
or CS2
S
≤
0.2V (CS2
S
controlled),
BYTE
S
=Vcc
S
±
0.3V or Vss
±
0.3V,
Other input =0~Vcc
S
-
0.5
15
μ
A
AC TEST CONDITION
Parameter
Value
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
Output Load
C
L
= 30pF
CAPACITANCE
(T
A
= 25
°
C, Vcc
F
= Vcc
S
= 3.3V, f = 1.0MHz)
NOTE:
Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
-
18
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
20
pF
Control Ball Capacitance
C
IN2
V
IN
=0V
-
18
pF
0V
Vcc
Vcc/2
Vcc/2
Input Pulse and Test Point
Input & Output
Test Point
Output Load
*
CL= 30pF including Scope
and Jig Capacitance
C
L
Device
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