參數資料
型號： K5A3280YBC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數： 36/45頁
文件大?。?/td> 625K
代理商： K5A3280YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 36 -
Preliminary
Read While Write Operations
Flash SWITCHING WAVEFORMS
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Write Cycle Time
t
WC
70
-
80
-
ns
Write Pulse Width
t
WP
35
-
35
-
ns
Write Pulse Width High
t
WPH
25
-
25
-
ns
Address Setup Time
t
AS
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
ns
Data Hold Time
t
DH
0
-
0
-
ns
Read Cycle Time
t
RC
70
-
80
-
ns
Chip Enable Access Time
t
CE
-
70
-
80
ns
Address Access Time
t
AA
-
70
-
80
ns
Output Enable Access Time
t
OE
-
25
-
25
ns
OE Setup Time
t
OES
0
-
0
-
ns
OE Hold Time
t
OEH2
10
-
10
-
ns
CE
F
& OE Disable Time
t
DF
-
16
-
16
ns
Address Hold Time
t
AHT
0
-
0
-
ns
CE
F
High during toggle bit polling
t
CEPH
20
-
20
-
ns
NOTE:
This is an example in the program-case of the Read While Write function.
DA1 : Address of Bank1, DA2 : Address of Bank 2
PA = Program Address at one bank , RA = Read Address at the other bank, PD = Program Data In , RD = Read Data Out
OE
CE
F
DQ
WE
t
RC
Read
Command
t
WC
Command
t
WC
Read
t
RC
Read
t
RC
Read
t
RC
t
AH
t
AA
t
CE
t
AS
t
AHT
t
AS
t
CEPH
t
OE
t
OES
t
WP
t
OEH2
t
DF
t
DS
t
DH
t
DF
DA1
DA2
(555H)
DA1
DA1
DA2
(PA)
DA2
(PA)
Valid
Output
Valid
Output
Valid
Input
Valid
Output
Valid
Input
Status
Address
(A0H)
(PD)
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參數描述
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K5A3340YBC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
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