參數(shù)資料
型號： K4N56163QF-GC37
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit gDDR2 SDRAM
中文描述： 片256Mbit GDDR2 SDRAM的
文件頁數(shù)： 69/73頁
文件大小： 1262K
代理商： K4N56163QF-GC37
- 69 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Input Signal Overshoot/Undershoot Specification
AC Overshoot/Undershoot Specification for Address and Control Pins A0-A15, BA0-BA2, CS, RAS, CAS, WE,
CKE, ODT
Parameter
Specification
- 37
0.9V
0.9V
- 30
0.9V
0.9V
Maximum peak amplitude allowed for overshoot area (See following figyre):
Maximum peak amplitude allowed for undershoot area (See following figure):
Maximum overshoot area above VDD (See following figure).
Maximum undershoot area below VSS (See following figure).
0.56 V-ns
0.56 V-ns
0.45 V-ns
0.45 V-ns
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins DQ, DQS, DM, CK, CK
Parameter
Specification
- 37
0.9V
0.9V
-30
0.9V
0.9V
Maximum peak amplitude allowed for overshoot area (See following figure):
Maximum peak amplitude allowed for undershoot area (See following figure):
Maximum overshoot area above VDDQ (See following figure):
Maximum undershoot area below VSSQ (See following figure):
0.28 V-ns
0.28 V-ns
0.23 V-ns
0.23 V-ns
Overshoot Area
Maximum Amplitude
V
DD
Undershoot Area
Maximum Amplitude
V
SS
Volts
(V)
AC Overshoot and Undershoot Definition for Address and Control Pins
Time (ns)
Overshoot Area
Maximum Amplitude
V
DDQ
Undershoot Area
Maximum Amplitude
V
SSQ
Volts
(V)
AC Overshoot and Undershoot Definition for Clock, Data, Strobe, and Mask Pins
Time (ns)
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