參數(shù)資料
型號(hào): K4N56163QF-GC37
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁(yè)數(shù): 38/73頁(yè)
文件大小: 1262K
代理商: K4N56163QF-GC37
- 38 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from memory loca-
tions (read cycle). The parameters that define how the burst mode will operate are burst sequence and burst length.
gDDR2 SDRAM supports 4 bit burst and 8 bit burst modes only. For 8 bit burst mode, full interleave address ordering is
supported, however, sequential address ordering is nibble based for ease of implementation. The burst type, either
sequential or interleaved, is programmable and defined by the address bit 3 (A3) of the MRS, which is similar to the DDR
SDRAM operation. Seamless burst read or write operations are supported. Unlike DDR devices, interruption of a burst
read or write cycle during BL = 4 mode operation is prohibited. However in case of BL = 8 mode, interruption of a burst
read or write operation is limited to two cases, reads interrupted by a read, or writes interrupted by a write. Therefore the
Burst Stop command is not supported on gDDR2 SDRAM devices.
Burst Length and Sequence
BL = 4
BL = 8
Note: Page length is a function of I/O organization and column addressin
Burst Length
Starting Address (A1 A0)
Sequential Addressing (decimal)
Interleave Addressing (decimal)
4
0 0
0, 1, 2, 3
0, 1, 2, 3
0 1
1, 2, 3, 0
1, 0, 3, 2
1 0
2, 3, 0, 1
2, 3, 0, 1
1 1
3, 0, 1, 2
3, 2, 1, 0
Burst Length
Starting Address (A2 A1 A0)
Sequential Addressing (decimal)
Interleave Addressing (decimal)
8
0 0 0
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
0 0 1
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
0 1 0
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
0 1 1
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
1 0 0
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
1 0 1
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
1 1 0
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
1 1 1
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
相關(guān)PDF資料
PDF描述
K4PE68A Transient Voltage Suppressor Diodes
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N56163QG-ZC2A 制造商:Samsung Semiconductor 功能描述:
K4P24V3 制造商:AROMAT 功能描述:REPLAY 700 OHM
K4P-24V-3 制造商:AROMAT 功能描述:REPLAY 700 OHM
K4P2G324ED-AGC1000 制造商:Samsung 功能描述:K4P2G324ED-AGC1000 - Trays
K4P4G324EB-AGC1000 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Semiconductor 功能描述:MOBILE DDR2-P SDRAM - Trays