| 型號: | K4E661612D | 
| 廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. | 
| 英文描述: | CMOS DRAM | 
| 中文描述: | 的CMOS內(nèi)存 | 
| 文件頁數(shù): | 28/36頁 | 
| 文件大?。?/td> | 397K | 
| 代理商: | K4E661612D | 

相關(guān)PDF資料  | 
PDF描述  | 
|---|---|
| K4E660412D | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | 
| K4E640412D | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | 
| K4E660812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out | 
| K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out | 
| K4E660812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out | 
相關(guān)代理商/技術(shù)參數(shù)  | 
參數(shù)描述  | 
|---|---|
| K4E661612E-TC50 | 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 EDO DRAM, 50 ns, PDSO50 | 
| K4E-6V-1 | 制造商:Panasonic Electric Works 功能描述: | 
| K4E-6V-9 | 制造商:Panasonic Electric Works 功能描述: | 
| K4EB1101J | 制造商:Panasonic Electric Works 功能描述: | 
| K4EB121 | 制造商:Panasonic Electric Works 功能描述:RELAY K4 12V |