參數(shù)資料
型號(hào)： K4E661612D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： CMOS DRAM
中文描述： 的CMOS內(nèi)存
文件頁(yè)數(shù)： 9/36頁(yè)
文件大?。?/td> 397K
代理商： K4E661612D
CMOS DRAM
K4E661612D,K4E641612D
Industrial Temperature
t
C W L
is specified from W falling edge to the earlier C A S r i s i n g e d g e .
t
CSR
is referenced to earlier C A S falling before R A S transition low.
t
C H R
is referenced to the later C A S rising high after R A S transition low.
t
DS
is specified for the earlier C A S falling edge and
t
DH
is specified by the later C A S falling edge in early write cycle.
If R A S g o e s h i g h b e f o r e C A S high going, the open circuit condition of the output is achieved by C A S h i g h g o i n g .
t
ASC
≥
6 n s , A s s u m e t
T
=2.0ns, if t
ASC
≤
6ns, then t
H P C
(min) and t
C A S
( m i n ) m u s t b e i n c r e a s e d b y t h e v a l u e o f " 6 n s - t
ASC
".
If
t
RASS
≥
1 0 0 u s , t h e n R A S p r e c h a r g e t i m e m u s t u s e
t
RPS
i n s t e a d o f
t
R P
.
F o r R A S -only-Refresh and Burst C A S -before-R A S r e f r e s h m o d e , 4 0 9 6 c y c l e s ( 4 K / 8 K ) o f b u r s t r e f r e s h m u s t b e e x e c u t e d w i t h i n
64ms before and after self refresh, in order to meet refresh specification.
For distributed C A S-before-R A S w i t h 1 5 . 6 u s i n t e r v a l , C B R r e f r e s h s h o u l d b e e x e c u t e d w i t h i n 1 5 . 6 u s i m m e d i a t e l y b e f o r e a n d
after self refresh in order to meet refresh specification.
t
CSR
t
C H R
R A S
L C A S
U C A S
t
D S
t
DH
L C A S
U C A S
D Q 0 ~ D Q 1 5
D i n
2 2 .
2 1 .
2 0 .
1 9 .
1 8 .
1 7 .
1 6 .
2 3 .
2 4 .
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