參數(shù)資料
型號(hào): K4E661612D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS DRAM
中文描述: 的CMOS內(nèi)存
文件頁(yè)數(shù): 19/36頁(yè)
文件大?。?/td> 397K
代理商: K4E661612D
CMOS DRAM
K4E661612D,K4E641612D
Industrial Temperature
t
RWL
R A S
V
IH
-
V
IL
-
U C A S
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
O E
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR.
t
RAS
t
R W C
t
RP
t
R S H
t
RCD
t
CAS
t
C S H
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
C R P
D o n
t c a r e
WORD READ - MODIFY - WRITE CYCLE
U n d e f i n e d
L C A S
V
IH
-
V
IL
-
V
I/OH
-
V
I/OL
-
D Q 0 ~ D Q 7
V
I/OH
-
V
I/OL
-
D Q 8 ~ D Q 1 5
t
W P
t
C W L
t
D S
t
D H
t
R S H
t
RCD
t
CAS
t
C R P
t
A W D
t
CWD
t
O E A
t
R W D
t
OED
t
O E Z
t
RAC
t
AA
t
O E Z
t
RAC
t
AA
t
D S
t
OED
t
D H
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
t
C A C
t
CLZ
t
CAC
t
CLZ
t
OLZ
t
OLZ
相關(guān)PDF資料
PDF描述
K4E660412D 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640412D 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660812B 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E640812B 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E660812C 8M x 8bit CMOS Dynamic RAM with Extended Data Out
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