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參數(shù)資料
| 型號(hào)： | JANSR2N7269 |
| 廠商： | International Rectifier |
| 英文描述： | Radiation Hardened Power MOSFET(功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 輻射加固功率MOSFET（功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 271K |
| 代理商： | JANSR2N7269 |
www.irf.com
5
Pre-Irradiation
IRHM7250, JANSR2N7269
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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