參數(shù)資料
型號(hào)： HYB25D512800AT-7
英文描述： ?512Mb (64Mx8) DDR266A (2-3-3)?
中文描述： ？的512Mb（64Mx8）DDR266A（2-3-3）？
文件頁數(shù)： 52/76頁
文件大?。?/td> 1218K
代理商： HYB25D512800AT-7
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 52 of 76
2002-05-06
Normal Mode Pulldown and Pullup Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage
lie within the outer bounding lines of the V-I curve.
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed
1.7, for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity
±
10
%
, for device
drain to source voltages from 0.1 to 1.0V.
Normal Mode Pulldown Characteristics
Normal Mode Pullup Characteristics
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
1
O
(
V
OUT
(V)
Maximum
N
ominal
H
igh
N
ominal Low
Minimum
Maximum
N
ominal
H
igh
N
ominal Low
Minimum
V
OUT
(V)
0.5
1
1.5
2
2.5
0
0
-20
-40
-60
-80
-100
-120
-140
-160
1
O
(
相關(guān)PDF資料
PDF描述
HYB25D512800AT-8 ?512Mb (64Mx8) DDR200 (2-2-2)?
HYB25M128160C-653 RAMBUS DRAM
HYB25M128160C-745 RAMBUS DRAM
HYB25M128160C-840 RAMBUS DRAM
HYB25M128160C-845 RAMBUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D512800CE-5 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB25D512800CE-6 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB25DC512160CE-5 制造商:Infineon Technologies AG 功能描述: 制造商:QIMONDA 功能描述:
HYB25L256160AC-7.5 制造商:Infineon Technologies AG 功能描述:
HYB25L512160AC-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
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