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參數(shù)資料
| 型號(hào)： | HYB18T512160AF-3S |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512-Mbit DDR2 SDRAM |
| 中文描述： | 512兆位DDR2 SDRAM的 |
| 文件頁(yè)數(shù)： | 76/117頁(yè) |
| 文件大?。?/td> | 2102K |
| 代理商： | HYB18T512160AF-3S |
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HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Truth tables
Data Sheet
76
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
Table 21
Current State
1)
Clock Enable (CKE) Truth Table for Synchronous Transitions
CKE
Previous Cycle
6)
(N-1)
(N)
Power-Down
L
L
L
H
Self Refresh
L
L
L
H
Bank(s)
Active
All Banks Idle
H
L
1) Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
2) Command (N) is the command registered at clock edge N, and Action (N) is a result of Command (N)
3) The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
See
Chapter 3.24.2
.
4) CKE must be maintained HIGH while the device is in OCD calibration mode.
5) Operation that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
6) CKE (N) is the logic state of CKE at clock edge N; CKE (N-1) was the state of CKE at the previous clock edge.
7) The Power-Down Mode does not perform any refresh operations. The duration of Power-Down Mode is therefor limited by
the refresh requirements
8) “X” means “don’t care (including floating around
V
REF
)” in Self Refresh and Power Down. However ODT must be driven
HIGH or LOW in Power Down if the ODT function is enabled (Bit A2 or A6 set to “1” in EMRS(1)).
9) All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
10) Valid commands for Power-Down Entry and Exit are NOP and DESELECT only.
11) t
CKE.MIN
of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid
input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of
t
IS
+ 2
×
t
CKE
+
t
IH
.
12)
V
REF
must be maintained during Self Refresh operation.
13) On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR
period. Read commands may be issued only after
t
XSRD
(200 clocks) is satisfied.
14) Valid commands for Self Refresh Exit are NOP and DESELCT only.
15) Power-Down and Self Refresh can not be entered while Read or Write operations, (Extended) mode Register operations,
Precharge or Refresh operations are in progress. See
Chapter 3.25
and
Chapter 3.24
for a detailed list of restrictions.
16) Self Refresh mode can only be entered from the All Banks Idle state.
17) Must be a legal command as defined in the Command Truth Table.
Command (N)
2)
3)
RAS, CAS, WE
Action (N)
2)
Note
4)5)
Current Cycle
6)
X
DESELECT or NOP Power-Down Exit
X
DESELECT or NOP Self Refresh Exit
DESELECT or NOP Active Power-Down Entry
Maintain Power-Down
7)8)11)
7)9)10)11)
Maintain Self Refresh
8)11)12)
9)12)13)14)
H
L
7)9)10)11)15)
DESELECT or NOP Precharge Power-Down
Entry
AUTOREFRESH
Self Refresh Entry
Refer to the Command Truth Table
9)10)11)15)
H
H
L
H
7)11)14)16)
Any State other
than
listed above
17)
Table 22
Name (Function)
Write Enable
Write Inhibit
Data Mask (DM) Truth Table
DM
L
H
DQs
Valid
X
Note
1)
1) Used to mask write data; provided coincident with the corresponding data.
1)
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| HYB18T512161BF-25 | 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA |
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| HYB18T512800BF-2.5 | 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線(xiàn)串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF) |
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